FLX Series

Precision Surface Stress Analysis

With thermal cycling and ambient auto-rotation models available, the Toho FLX Thin Film Stress Measurement Systems offer Industry Standard capabilities for mass production and research facilities that demand accurate stress measurements on various films and substrates. Incorporating KLA-Tencor’s patented “Dual Wavelength” technology, Toho FLX Series tools precisely determine and analyze surface stress caused by deposited thin films. In-situ stress measurements can be made from -65°C to 500°C at heating rates up to 25°C per minute (the cooling unit to -65°C is optional). An understanding of stress variations with temperature is essential for characterizing material properties such as stress relaxation, moisture evolution, and phase changes.

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3300-R Specs
3300-T Specs
2320-R Specs
2320-S Specs
2000-A Specs

Applications

With a stressed film, defects such as dislocations, voids, and cracking may occur.  The FLX stress measurement system helps troubleshoot applications listed below:

  •  Aluminum stress-induced voids
  •  Passivation cracking (nitride, oxide)
  • Stress-induced dislocations in silicon
  •  Electrical test yield degradation
  • Tungsten silicide cracking
  • Stress increase in oxides during temperature cycling
  • Constant current stress test (CCST) degradation
  • Matching metallization expansion on GaAs
  • Silicon cracking due to high film stress

Specifications

FLX-2320-S Thermal Cycling

Performance

Maximum Scan Diameter

200mm

Measurement Range

1 to 4,000MPa1

Repeatability

1.3MPa2

Accuracy

Less than 2.5% or 1 Mpa whichever is larger

Minimum Radius

2.0m

Maximum Radius

33km

Operating Temperature

Room Temp to 500°C

(-65°C Cryo Option)

Available

Wafer Mapping

Manual

3D Mapping

Optional

1 725µm wafer thickness for 10,000Å thin film
2 (1s): 1 x l07 dyne/cm2

Hardware Configuration

Sample Size

75 to 200mm

50mm Option

Available

Wafer Rotation

Manual

Forced Gas Cooling

Computer-controlled 3

3 (500°C to 100°C in 60 minutes) 30 w/ LN2)

Facilities Requirements

Computer Power

100V AC, 50/60Hz, 6A

System Power

220V AC, 50/60Hz, 13A

Purge Gas

N² or Ar gas

Gas Flow

1.5L/min, 0.3kg/cm²

System Dimensions

566 x 450 x 488 (mm)

PC Dimensions

400 x 420 x 530 (mm)

PC Weight

20kg

System Weight

45.5kg

FLX-2320-R Auto-Mapping

Specifications

Maximum Scan Diameter

200mm

Measurement Range

1 to 4,000MPa1

Repeatability

1.3MPa2

Accuracy

Less than 2.5% or 1 Mpa whichever is larger

Minimum Radius

2.0m

Maximum Radius

33km

Operating Temperature

Room Temp

(-65°C Cryo Option)

N/A

Wafer Mapping

Automatic

3D Mapping

Standard

1 725µm wafer thickness for 10,000Å thin film
2 (1s): 1 x l07 dyne/cm2

Hardware Configuration

Sample Size

75 to 200mm

50mm Option

N/A

Wafer Rotation

Automatic

Forced Gas Cooling

N/A

Facilities Requirements

Computer Power

100V AC, 50/60Hz, 6A

System Power

100V AC, 50/60Hz, 13A

Purge Gas

N/A

Gas Flow

N/A

System Dimensions

566 x 450 x 488 (mm)

PC Dimensions

400 x 420 x 530 (mm)

PC Weight

20kg

System Weight

45.5kg

FLX-3300-T Thermal Cycling

Performance

Maximum Scan Diameter

300mm

Measurement Range

1 to 3,500MPa1

Repeatability

1.3MPa2

Accuracy

Less than 2.5% or 1 Mpa whichever is larger

Minimum Radius

2.0m

Maximum Radius

33km

Operating Temperature

Room Temp to 500°C

(-65°C Cryo Option)

Available

Wafer Mapping

Manual

3D Mapping

Optional

1 725µm wafer thickness for 10,000Å thin film
2 (1s): 1 x l07 dyne/cm2

Hardware Configuration

Sample Size

200 & 300mm

50mm Option

Available

Wafer Rotation

Manual

Forced Gas Cooling

Computer-controlled 3

3 (500°C to 100°C in 60 minutes) 30 w/ LN2)

Facilities Requirements

Computer Power

100V AC, 50/60Hz, 6A

System Power

220V AC, 50/60Hz, 13A

Purge Gas

N² or Ar gas

Gas Flow

1.5L/min, 0.3kg/cm²

System Dimensions

665 x 550 x 492 (mm)

PC Dimensions

400 x 420 x 530 (mm)

PC Weight

20kg

System Weight

~60kg

FLX-3300-R Auto-Mapping

Performance

Maximum Scan Diameter

300mm

Measurement Range

1 to 3,500MPa1

Repeatability

1.3MPa2

Accuracy

Less than 2.5% or 1 Mpa whichever is larger

Minimum Radius

2.0m

Maximum Radius

33km

Operating Temperature

Room Temp

(-65°C Cryo Option)

N/A

Wafer Mapping

Automatic

3D Mapping

Standard

1 725µm wafer thickness for 10,000Å thin film
2 (1s): 1 x l07 dyne/cm2

Hardware Configuration

Sample Size

200 & 300mm

50mm Option

N/A

Wafer Rotation

Automatic

Forced Gas Cooling

N/A

Facilities Requirements

Computer Power

100V AC, 50/60Hz, 6A

System Power

100V AC, 50/60Hz, 13A

Purge Gas

N/A

Gas Flow

N/A

System Dimensions

665 x 550 x 492 (mm)

PC Dimensions

400 x 420 x 530 (mm)

PC Weight

20kg

System Weight

~60kg

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