With a stressed film, defects such as dislocations, voids, and cracking may occur. The FLX stress measurement system helps troubleshoot applications listed below:
- Aluminum film stress‑induced void analysis
- Passivation cracking studies (nitride/oxide)
- Stress‑induced dislocation detection in silicon
- Tungsten disilicide fracture and micro‑cracking analysis
- Oxide stress monitoring during temperature cycling (thermally driven expansion/contraction characterization)
- Metallization expansion matching on GaAs substrates (compound semiconductor reliability engineering)
- High‑stress film evaluation leading to silicon substrate cracking prevention and reliability assurance in advanced nodes
- General R&D for film mechanics, including modulus extraction, diffusion‑coefficient studies, bow/warp evolution, and multi‑layer stress modeling (supported by WinFLX’s analytical feature set)