FLX Series

Laser based film stress measurement for substrates up to 300 mm, built on KLA-Tencor’s patented dual wavelength design. Trusted in production fabs and research labs to detect cracking, voids, and drift.

Toho FLX-2000-A thin film stress measurement system

FLX-2000-A

1 to 4,000 MPa

Stress measurement range

1.3 MPa

Repeatability

−65 to 500 °C

Temperature range with cooling option

25 to 300 mm

Substrate diameter across the series

Models

Four Configurations, One Measurement Platform

Models are grouped by maximum wafer size. The suffix indicates the stage: -S and -T add a temperature platform for stress versus temperature studies, and -R adds automated rotation for room temperature mapping.

Toho FLX-2000-A thin film stress measurement system

200 mm · Entry platform

FLX-2000-A

High quality stress and radius measurement at a streamlined and affordable price. The same dual wavelength optics as the FLX-2320 models, without temperature control or the automated stage. Ideal for academic settings and low volume fabs.

Wafer size 25 to 200 mm
Stress range 1 to 4,000 MPa
Temperature Room temperature

Side by Side

Model FLX-2000-A FLX-2320-S FLX-2320-R FLX-3300-T FLX-3300-R FLX-2320-L
Wafer size 25 to 200 mm 25 to 200 mm 25 to 200 mm 200 to 300 mm 200 to 300 mm 100 to 200 mm (4 to 8 in)
Stress range 1 to 4,000 MPa 1 to 4,000 MPa 1 to 4,000 MPa 1 to 3,500 MPa 1 to 3,500 MPa 1 to 4,000 MPa
Temperature Room temperature RT to 500 °C, cryo to −65 °C Room temperature RT to 500 °C, cryo to −65 °C Room temperature Room temperature
Stage Manual quick-touch rotation Manual positioning Automated rotation Manual positioning Automated rotation Robotic wafer handling
Mapping 3D maps via manual rotation 2D and 3D maps 3D maps standard 2D and 3D maps 3D maps standard 3D maps standard
Best for Academic labs, low volume fabs Stress vs. temperature Production mapping 300 mm thermal studies 300 mm production High throughput production

Shared across all models: accuracy better than 2.5% or 1 MPa, whichever is larger, and a measurable radius of curvature from 2 m to 33 km. On mobile, the table shows the model selected above.

Automated platform

FLX-2320-L Automated Thin Film Stress Analysis

The FLX‑2320‑L is a fully automated thin‑film stress metrology platform engineered for high‑throughput production environments, featuring cassette‑to‑cassette robotic wafer handling and patented dual‑wavelength laser scanning for accurate stress characterization across reflective, transparent, and translucent films.

It delivers 1–4000 MPa stress measurement capability with 1.3 MPa (1σ) reproducibility and integrated 3D topography mapping, enabling precise monitoring of bow, curvature, and stress uniformity on 4–8 inch wafers.

FLX-2320-L measurement stage inside the enclosure

Measurement stage

FLX-2320-L single-arm wafer handling robot

Cassette-to-cassette wafer handling robot

Toho FLX-2320-L automated thin film stress measurement system
  • Built on the FLX-2320-R measurement platform

  • Single SEMI E1.7 cassette port for 25-slot cassettes

  • Single-arm robot with a ceramic, Teflon-coated backside vacuum gripper

  • Backside vacuum alignment and three-point PEEK wafer support

  • Two configurations: 150 and 200 mm, or 100, 125, and 150 mm wafers

Measurement principle

Stress from Curvature, Measured by Laser

Stress forms when materials with different coefficients of thermal expansion are bonded together. As a coated wafer cools, film and substrate contract at different rates and the wafer bends. The FLX scans the substrate before and after deposition and calculates film stress from the change in radius of curvature.

  • Patented dual wavelength laser selects the optimal wavelength for difficult films such as silicon nitride

  • A single moving optical element keeps vibration low and accuracy high

  • Works on all reflecting films and a wide range of substrate materials

  • Stress measured and displayed as a function of time or temperature

Applications

Find Stress Related Failures Before They Reach the Next Step

01

Cracking and Voids

Identify metal and dielectric films at risk of cracking, voiding, and lifting, including passivation layers.

02

Thermal Behavior

Plot stress versus temperature to extract biaxial modulus and linear expansion coefficient.

03

Multilayer Stacks

Minimize net stress in multilayer films and characterize stress in membranes.

04

Process Control

Trend stress and uniformity across lots with SPC plotting and full wafer maps.

Software

Analysis Tools Included as Standard

Windows based software displays any combination of stress, time, surface deflection, and reflected light intensity.

  • Biaxial modulus, linear expansion coefficient, and stress uniformity

  • Water diffusion coefficient in dielectric films

  • 2D and 3D views of wafer topography

  • Stress versus temperature curves and file subtraction

  • Automatic recalculation when film or substrate thickness is corrected

FLX software 3D wafer topography and stress map

3D wafer topography and stress map

FLX software stress versus temperature curve

Stress versus temperature curve

FLX software surface deflection graph

Surface deflection graph

Evaluate the FLX on Your Wafers

Send coated and uncoated samples to our Chicago lab. An applications engineer will measure them and recommend the right configuration.

Scroll to Top