There are many applications which benefit from the FTIR technique:

• Substrate thickness
• Thickness of epitaxial materials
• SiC epi layer & substrate thickness
• B and P concentration in PSG, BSG and BPSG
• CO – Substitutional carbon and interstitial oxygen in silicon substrates
• FSG – Fluorine content of FSG
• SiN – Measures hydrogen in silicon nitride films
• HSQ – Hydroxyl and hydrogen content in oxides SOG, FOX
• SiON – Oxygen, nitrogen and hydrogen in SiON.
• SiCN – Carbon in SiCN
• SiOC – Carbon in SiOC
• Oxygendose – Measurement of oxygen implant dose at SIMOX process
• Oxygen Precipitate – Measurement of oxygen precipitates in Si substrates

FTIR is very well suited to measure thick epitaxial materials which have a high absorbance in the visible wavelength range such as Si. By adding a transmission detector underneath the wafer surface, the transmitted spectrum of infrared light travelling through the material can be analyzed for presence of contaminating materials such as carbon, oxygen or hydrogen in Si substrates.