ECV Pro introduces the first ever in-situ camera for unprecedented levels of control, ECVision™. allowing real-time imaging of the semiconductor/ electrolyte interface. Now you can see exactly what occurs at the sample surface during a measurement. For III-Nitrides, the ECV Pro GaN option extends the performance of the system for optimal profiling of GaN, InGaN and AlGaN.
Hg Probe Alternative: The ECV Pro’s accuracy and reproducibility provide a viable, safe and environmentally friendly alternative to the Mercury probe. ECV Pro uses no Calomel reference electrode and is entirely Mercury free. The horizontal stage makes monitoring spatial distribution across a wafer simple and convenient. Using the depletion profi le mode and the ultra-repeatable contacting area, ECV Pro can accurately measure the surface doping variations across a wafer.
Alternative to Hall: ECV Pro offers many advantages over Hall measurements. These include measurement of electrically activated dopants and individual structural layer information. Additionally, the ECV Pro can be applied to a wide range of materials and structures and is not limited to profi ling only on Si or suitable PN structures.