High density imaging of peak lambda, peak intensity, FWHM and other LED materials relevant parameters.
Measurement accuracy and reproducibility (≤1 nm)
Capability of measuring bare and patterned wafers at resolutions down to 125 μm.
High resolution mapping for defect inspection down to 125 μm
Brightfield PL channel for detecting electrically active defects
Defect extraction, morphological analysis and quantification
Die-based yield binning capabilities allow yield prediction on a die level
Real-Time Defect Extractor (RDE) software with KLARF output
Epitaxial Layer Thickness
Epitaxial layer thickness and normalized reflectivity imaging at high resolution down to 125 μm. Excellent measurement accuracy (2% of nominal thickness) and reproducibility (1δ ≤ 1%)
Wafer shape profiling at multiple angles and high resolution down to 125 μm
Full wafer 3D bow reconstruction via data interpolation and smoothing ±500 μm bow measurement range and ±6 μm reproducibility