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THIN FILM DEPOSITION
In general, stress is induced when materials of dissimilar coefficients of thermal expansion are bonded together. Films may behave similarly at high temperatures but as films are cooled, materials may contract/expand differently, thus causing stress in the film. With a stressed film, defects such as dislocations, voids, and cracking may occur. The FLX stress measurement system helps troubleshoot applications listed below:
- Aluminum stress-induced voids
- Passivation cracking (nitride, oxide)
- Stress-induced dislocations in silicon
- Electrical test yield degradation
- Tungsten silicide cracking
- Stress increase in oxides during temperature cycling
- Constant current stress test (CCST) degradation
- Matching metallization expansion on GaAs
- Silicon cracking due to high film stress
APPLICATION NOTES
Toho Technology Provides Customers with Application Notes and Support for a variety of applications including;
- Thick Film Stress Measurement
- Improvement in Film Stress Measurement Using the Optical Cantilever Beam Technique
- Stress on Multiple Films
- Stress Mapping
- Silicon Wafer Deformation After Grinding
- Linear Thermal Expansion Coeffient and Biaxial Modulus
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